| PART |
Description |
Maker |
| AFL2X-XX |
OUTLINE, AFL2X-XX VARIABLE ATTEN., LOCKING COLLAR
|
Advanced Technical Materials Inc.
|
| 1N4981D 1N4973C 1N4955D 1N4957D 1N4957C 1N4964D 1N |
Diode Zener Single 91V 1% 5W 2-Pin Case E
Diode Zener Single 43V 2% 5W 2-Pin Case E
Diode Zener Single 7.5V 1% 5W 2-Pin Case E
Diode Zener Single 9.1V 1% 5W 2-Pin Case E
Diode Zener Single 9.1V 2% 5W 2-Pin Case E
Diode Zener Single 18V 1% 5W 2-Pin Case E
Diode Zener Single 10V 2% 5W 2-Pin Case E
Diode Zener Single 12V 1% 5W 2-Pin Case E
Diode Zener Single 51V 1% 5W 2-Pin Case E
Diode Zener Single 36V 2% 5W 2-Pin Case E
Diode Zener Single 15V 1% 5W 2-Pin Case E
Diode Zener Single 20V 1% 5W 2-Pin Case E
Diode Zener Single 75V 1% 5W 2-Pin Case E
Diode Zener Single 100V 2% 5W 2-Pin Case E
Diode Zener Single 100V 1% 5W 2-Pin Case E
Diode Zener Single 11V 1% 5W 2-Pin Case E
Diode Zener Single 75V 2% 5W 2-Pin Case E
Diode Zener Single 56V 1% 5W 2-Pin Case E
Diode Zener Single 24V 1% 5W 2-Pin Case E
Diode Zener Single 24V 2% 5W 2-Pin Case E
Diode Zener Single 10V 1% 5W 2-Pin Case E
Diode Zener Single 13V 2% 5W 2-Pin Case E
Diode Zener Single 30V 1% 5W 2-Pin Case E
Diode Zener Single 39V 1% 5W 2-Pin Case E
|
New Jersey Semiconductor
|
| MV104ZL1 MV104RLRP MV104RLRA MV104RLRAG |
39.5 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92 CASE 29-11, TO-226AA, 3 PIN
39.5 pF, 32 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-92 CASE 29-11, TO-226AA, 3 PIN
|
ON Semiconductor
|
| ZC931TA ZC933TA ZMV931TA ZC933ATA ZMV933TA ZMV934T |
VHF BAND, 22.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE SOT-23, 3 PIN
VHF BAND, 7.15 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE SOD-323, 2 PIN
VHF BAND, 7.15 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE SOT-23, 3 PIN
VHF BAND, 22.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE SOD-323, 2 PIN
VHF BAND, 52.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE SOD-323, 2 PIN
|
Diodes Inc.
Diodes, Inc.
ZETEX PLC
|
| MA4VAT904-1061T |
High IIP3 PIN Diode Variable Attenuator (0.80-1.0 GHz)
|
Tyco Electronics
|
| MA4VAT907-1061T MA4VAT907-1061T-15 |
High IIP3 PIN Diode Variable Attenuator 0.8 - 1.0 GHz
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| MV2101ZL1 MV2104RLRB MV2105RLRB MV2108RLRB MV2111R |
HF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE PLASTIC, CASE 182-02, TO-226AC, 2 PIN
HF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE PLASTIC, CASE 182-02, TO-226AC, 2 PIN
HF-UHF BAND, 15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE PLASTIC, CASE 182-02, TO-226AC, 2 PIN
HF-UHF BAND, 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE PLASTIC, CASE 182-02, TO-226AC, 2 PIN
HF-UHF BAND, 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE PLASTIC, CASE 182-02, TO-226AC, 2 PIN
HF-UHF BAND, 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE PLASTIC, CASE 182-02, TO-226AC, 2 PIN
HF-UHF BAND, 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE PLASTIC, CASE 182-02, TO-226AC, 2 PIN
|
Motorola Mobility Holdings, Inc.
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM
3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL
Microsemi Corporation
|
| JDV2S29SC |
UHF BAND, SILICON, VARIABLE CAPACITANCE DIODE LEAD FREE, SC2, 1-1R1A, 2 PIN
|
Toshiba, Corp.
|
| 1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
|
